Global Resistive Random Access Memory Market Report 2017

Resistive random-access memory (RAM) is a sort of non-volatile (NV) RAM that works by altering the resistance across a dielectric solid-state material known as a memristor. This technology is comparable to conductive-bridging RAM (CBRAM) and phase-change memory (PCM) (PCM).

Resistive Random Access Memory (RRAM) is a new technology that combines the benefits of RAM and Flash: Resistive Random Access Memory is non-volatile, quick, and inexpensive, and it does not degrade even after numerous Program/Erase cycles. It has been studied and developed for the previous decade, and its commercial use is likely to skyrocket in the coming years.

The major focus of Resistive Random Access Memory technology is to replace traditional Flash memory and is widely viewed as the “most likely to succeed” Flash replacement, since it provides the performance and manufacturability advantages over competing replacement alternatives.

Asia Pacific held a dominant position in the global resistive random access memory market in 2016 and is estimated to retain its dominance throughout the forecast period. China and India are some of the major countries that drive growth for the market in Asia Pacific. The increasing consumer electronics and automotive industry fuels the demand for resistive random access memory in Asia Pacific countries. In India, the production of the electronic market has generated a revenue of US$36.2 billion in 2016, from US$31.6 billion in 2015 and is predicted to reach up to $104 billion by 2020. The consumer electronic holds 8.3% of the total production of electronic goods. Moreover, the resistive random access memory market in North America also plays a major role in growth of the market. The increasing internet of things device market and rising trend of body wearable devices, provides immense opportunity for growth of the resistive random access memory market in the North American region.